Ion Implantation Doping of Si with 70 to 300 keV B. P. and As

W.K. Chu, B.L. Crowder, et al.

Applied Physics Letters

C.-Y. Ting, B.L. Crowder

JES

J.C. Tsang, M.W. Shafer, et al.

Physical Review B

B.L. Crowder

ISMSS 1989