R.B. Laibowitz, C.C. Tsuei, et al.
IEEE Transactions on Magnetics
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
R.B. Laibowitz, C.C. Tsuei, et al.
IEEE Transactions on Magnetics
J.D. Baniecki, C. Parks, et al.
MRS Proceedings 1999
R.H. Koch, B. Oh, et al.
Physica B: Physics of Condensed Matter
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