T.R. McGuire, D. Dimos, et al.
Journal of Applied Physics
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
T.R. McGuire, D. Dimos, et al.
Journal of Applied Physics
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Physical Review Letters
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Physical Review B
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