M. Shatzkes, P. Chaudhari, et al.
Physical Review B
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
M. Shatzkes, P. Chaudhari, et al.
Physical Review B
R.B. Laibowitz, E.I. Alessandrini, et al.
JVSTA
R.P. Robertazzi, A.W. Kleinsasser, et al.
Physical Review B
R.T. Collins, Z. Schlesinger, et al.
Physical Review Letters