C. B. Zota, Clarissa Convertino, et al.
BCICTS 2019
We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to L g = 25 nm at a nanowire dimension of 7 - 16 nm2. These devices use a single 7-nm-thick In0.80Ga0.20As (N D = 1 - 1019 cm-3) layer as both channel and contacts. The devices show SSsat = 76 mV/dec, peak g m = 1.6 mSm and I ON = 160A/m (at I OFF = 100 nA/m and V DD = 0.5 V), the latter which is the highest reported value for a junctionless FET. We also show that device performance is mainly limited by high parasitic access resistance due to the narrow and thin contact layer.
C. B. Zota, Clarissa Convertino, et al.
BCICTS 2019
Clarissa Convertino, C. B. Zota, et al.
Japanese Journal of Applied Physics
D. Cutaia, Kirsten E. Moselund, et al.
EUROSOI-ULIS 2015
C. B. Zota, Clarissa Convertino, et al.
IEEE Electron Device Letters