PaperOn the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2F.A. HouleApplied Physics Letters
PaperFactors controlling pattern formation in chemically amplified resists at sub-100 nm dimensionsW.D. Hinsberg, F.A. Houle, et al.J. Photopolym. Sci. Tech.
PaperVisible laser-induced nucleation and growth of Cr, Mo, and W films from the hexacarbonyls. Reactivity of CO on film surfacesF.A. Houle, K.A. SingmasterJournal of Physical Chemistry
PaperSimulations of thermal decomposition and film growth from the group VI metal hexacarbonylsF.A. Houle, W.D. HinsbergJournal of Physical Chemistry