Yuan Taur, S. Cohen, et al.
IEEE Electron Device Letters
The lateral scaling in carbon nanotube field effect transistors was analyzed. These devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and the drain. This was due to a change from Schottky-barrier modulation at the contacts to bulk switching.
Yuan Taur, S. Cohen, et al.
IEEE Electron Device Letters
F. Bozso, Ph. Avouris
Physical Review B
D. Schmeisser, C.M. Weinert, et al.
Chemical Physics Letters
Stuart B. Field, M.A. Kastner, et al.
Physical Review B