PaperBoron atom distributions in ion-implanted silicon by the (n,4He) nuclear reactionJ.F. Ziegler, B.L. Crowder, et al.Applied Physics Letters
PaperInjection mechanism and recombination kinetics in electroluminescent cdte diodesF.F. MoreheadJournal of Applied Physics
PaperEnhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomenaF.F. Morehead, R.F. LeverApplied Physics Letters
