Current challenges in Ge MOS technology
A. Dimoulas, M. Houssa, et al.
ECS Meeting 2006
The ability to modify the stacking sequence of ultrathin films offers a unique way to change either the interaction strength or the doping, but demands a careful control of each atomic monolayer. Progress is hampered by the lack of a direct method that allows differentiation on a local scale between the various terminating layers of a crystal. Here, the combination of a vacuum annealing process and friction force microscopy reveals this local distinction on a SrTiO3 surface. Using the friction contrast, we find how the terminating layer of a single crystal profoundly influences the terrace edge structure. © 1998 American Institute of Physics.
A. Dimoulas, M. Houssa, et al.
ECS Meeting 2006
A. Dimoulas, Y. Panayiotatos, et al.
ECS Meeting 2008
H.P. Lang, M.K. Baller, et al.
MEMS 1999
C. Rossel, M. Sousa, et al.
Microelectronic Engineering