Conal E. Murray, Jay M. Gambetta, et al.
IEEE T-MTT
We have used scanning microdiffraction topography to determine the mismatch strains and local strain distributions in silicon-on-insulator substrates with overlying thin film stressor features. Analysis of the data using the edge-force model and the Ewald-von Laue dynamical diffraction theory shows the presence of an exponential strain gradient in the vicinity of the buried SiO2 /Si -substrate interface. We show that, for simple geometries, it is possible to deduce the sign of the mismatch strain simply by inspecting the microdiffraction topograph. © 2008 American Institute of Physics.
Conal E. Murray, Jay M. Gambetta, et al.
IEEE T-MTT
Conal E. Murray, Paul R. Besser, et al.
Journal of Materials Research
Conal E. Murray, T. Graves-Abe, et al.
Applied Physics Letters
I.C. Noyan, G. Sheikh
MRS Spring Meeting 1993