R. Ludeke, M.T. Cuberes, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Local transport and trapping issues in Al2O3 gate oxide structures
Abstract
The bias dependence of interfacial barriers in Al2O3-based metal-oxide-semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions of the barriers were observed. A conduction band offset between Al2O3 and Si of 2.78 eV was obtained. Electron trapping into levels that overlap the Si band gap and are located near the Si-Al2O3 interface led to charge densities of ∼2.5 × 1012cm-2. © 2000 American Institute of Physics.
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