Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Quantum interference corrections to the magnetoresistance in one-sided modulation doped Si/SiGe quantum wells were investigated. From the weak localization effect, the temperature dependence of the phase coherence time is deduced and compared with the momentum relaxation time. It is found that electron-electron scattering is consistent with this observed behavior, but electron-phonon scattering is not. For magnetic fields above 0.5 T, the magnetoresistance is attributed to disorder-induced electron-electron interaction.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Peter J. Price
Surface Science
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997