S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Measurements of the magnetocapacitance of a two-dimensional electron gas in high mobility GaAs(Ga, Al)As heterostructure confirm, for the first time, the relationship between the density of states and the capacitance of a two-dimensional electron gas. We present the first magnetocapacitance measurements in the fractionally quantized Hall regime. © 1986.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
T.N. Morgan
Semiconductor Science and Technology