Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have measured the temperature dependence of the electrical resistivity of UBe13 for magnetic fields up to 8 T and pressures to 95 kbar. Pressure increases the temperature range over which ρ{variant} = ρ{variant}0 + AT2, while the pressure and magnetic field dependences of ρ{variant}0 and A reflect changes in the quasiparticle interactions. © 1990.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
John G. Long, Peter C. Searson, et al.
JES
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures