Revanth Kodoru, Atanu Saha, et al.
arXiv
We combine a material self-assembly with conventional lithographic processes in order to fabricate magnetoelectronic devices composed of ordered three-dimensional arrays of magnetite (Fe3 O4) nanoparticles. The device magnetoresistance reaches 35% at 60 K, corresponding to an electron spin polarization of 73%. Magnetoresistance of 12% remains at room temperature. Magnetoresistance decreases with both increasing temperature and bias voltage, however, the magnetoresistance of nanoparticle-based structures is only weakly dependent on the voltage-a favorable attribute for application to electronics. © 2006 The American Physical Society.
Revanth Kodoru, Atanu Saha, et al.
arXiv
T. Schneider, E. Stoll
Physical Review B
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications