Conference paper
HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology
D.R. Greenberg, D. Ahlgren, et al.
RFIC 2000
Paper
Measured results on bandgap reference in SiGe BiCMOS
Abstract
The measured temperature and supply voltage dependences of a bandgap reference circuit first published by Gilbert and implemented in IBM's SiGe BiCMOS process agree well with model predictions. The plot of VBGR against temperature exhibits less curvature than predicted elsewhere for SiGe BGRs.