F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110. © 1991 Springer-Verlag.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
R.W. Gammon, E. Courtens, et al.
Physical Review B
Robert W. Keyes
Physical Review B