Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
To get accurate values of the London penetration depths in YBa2Cu3Ox, μSR measurements were performed on a high quality, sintered sample and a c-axis-oriented polycrystal. For the sintered sample the temperature dependence of the effective penetration depth λeff is well described by the two-fluid model, with λeff(0) = 155(10) nm. This behavior of λeff(T) is consistent with conventional s-wave pairing. The anisotropy ratio λc λab {reversed tilde equals} 5(1) was determined from measurements on the polycrystal. These results were used to calculate λab(0) = 130(10) nm and λc(0) {reversed tilde equals} 500 - 800 nm. © 1989.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Peter J. Price
Surface Science