N. Braslau, J.B. Gunn, et al.
Solid-State Electronics
The decrease of electron drift velocity with increasing electric field has been measured for GaAs. The value of the negative differential mobility is found to be about -300 cm2 V-1 sec-1. © 1966.
N. Braslau, J.B. Gunn, et al.
Solid-State Electronics
J.B. Gunn
IEEE T-ED
J.B. Gunn
IEEE T-ED
J.B. Gunn
Electronics Letters