John D. Cressler, James Warnock, et al.
IEEE Electron Device Letters
Paper
Method for Determining the Emitter and Base Series Resistances of Bipolar Transistors
Abstract
A simple method for determining both the emitter and the base series resistances of bipolar transistors from the measured I-V characteristics is described. The method is based on the observation that deviation of the base current from the ideal exp (qVBE/kT) behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors. © 1984 IEEE
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