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Small
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
Sung Ho Kim, Oun-Ho Park, et al.
Small
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Physical Review B