Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry