Jerng-Sik Song, Chin-An Chang
Applied Physics Letters
Films of In1-xGaxAs and GaSb1-yAs y over the entire composition ranges have been grown on (100) GaAs, InAs, and GaSb substrates by MBE. In situ observations by high-energy electron diffraction have revealed a variety of surface reconstructions and correlated the growth process with the lattice mismatch. The compositions are governed by the relative rates of In and Ga in In1-xGaxAs, but primarily by that of Sb in GaSb1-yAsy because of its dominant incorporation over As. In these alloys, Sn is found to be a donor throughout In1-xGaxAs but an amphoteric impurity in GaSb1-yAsy.
Jerng-Sik Song, Chin-An Chang
Applied Physics Letters
A. Harwit, M.B. Ritter, et al.
QELS 1989
Chin-An Chang
Applied Physics Letters
G. Jezequel, A. Taleb-lbrahimi, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films