PaperEnhanced conduction and minimized charge trapping in electrically alterable read-only memories using off-stoichiometric silicon dioxide filmsD.J. DiMaria, D.W. Dong, et al.Journal of Applied Physics
PaperStudy of charge trapping as a degradation mechanism in electrically alterable read-only memoriesC. Falcony, D.J. DiMaria, et al.Journal of Applied Physics
PaperExplanation for the polarity dependence of breakdown in ultrathin silicon dioxide filmsD.J. DiMariaApplied Physics Letters
PaperHot electrons in silicon dioxide: Ballistic to steady-state transportD.J. DiMaria, M.V. FischettiApplied Surface Science
