PaperThe optical absorption edge of single-crystal AlN prepared by a close-spaced vapor processP.B. Perry, R.F. RutzApplied Physics Letters
PaperGaAs Optically Coupled Transistor with a Lasing EmitterR.F. Rutz, M.I. Nathan, et al.Proceedings of the IEEE
PaperTransistor-Like Device Using Optical Coupling Between Diffused P-N Junctions in GaAsR.F. RutzProceedings of the IEEE
