Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Paper
New high resolution and high sensitivity deep UV, x-ray, and electron beam resists
Abstract
A new family of highly sensitive negative resists for Deep UV, X-ray and electron beam exposure capable of better than 100 nm resolution and very high pattern aspect ration has been investigated. The resists are based epoxidized novolac resins sensitized with acid generating compounds. © 1990.