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Journal of Applied Physics
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
D. Guidotti, J.S. Batchelder, et al.
Journal of Applied Physics
R. Tsu
Journal of Applied Physics
R. Tsu, W.E. Howard, et al.
Journal of Non-Crystalline Solids
J.A. Van Vechten, C.D. Thurmond
Physical Review B