V. Heine, J.A. Van Vechten
Physical Review B
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
V. Heine, J.A. Van Vechten
Physical Review B
J.W. Mayer, J.F. Ziegler, et al.
Journal of Applied Physics
J.A. Van Vechten
MRS Proceedings 1983
J.A. Van Vechten
Physical Review B