J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.
J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
J.A. Van Vechten
Journal of Crystal Growth
R. Tsu, L. Esaki
Applied Physics Letters
R. Tsu, J.F. Janak
Physical Review B