P. Solomon, S.L. Wright, et al.
Applied Physics Letters
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.
P. Solomon, S.L. Wright, et al.
Applied Physics Letters
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IEEE International SOI Conference 2000
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Applied Physics Letters
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SNW 2021