P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The exciton ground state in silicon is calculated taking into accoun the effect of the split-off valence band. We show that this effect is very important. The anisotropy splitting of the ground state is found to be 0.32 meV, while a previous analysis, which neglected the split-off band, gave 0.46 meV. The new result is in good agreement with recent experimental data. © 1979.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Gangulee, F.M. D'Heurle
Thin Solid Films
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Sung Ho Kim, Oun-Ho Park, et al.
Small