S.J. Koester, K. Ismail, et al.
DRC 1997
The operation of a negative differential conductance (NDC) transistor fabricated on a high-mobility Si/Si1-xGex heterostructure wafer is described. The drain characteristic of this device shows a large NDC with current peak-to-valley ratios as high as 600 (100) at T = 0.4 K (T = 1.3 K). The NDC can be modulated over a wide range of current levels by either of two separately-contacted gate electrodes. The device shows bistable switching behavior in both current- and voltage-controlled circuit configurations. The novel operating principle of this transistor is described, along with its potential for future logic and memory applications.
S.J. Koester, K. Ismail, et al.
DRC 1997
K.Y. Lee, K. Ismail, et al.
Microelectronic Engineering
K. Ismail, T.P. Smith III, et al.
Applied Physics Letters
W. Lu, X.W. Wang, et al.
IEEE Electron Device Letters