A. Gangulee, F.M. D'Heurle
Thin Solid Films
Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f-frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency h is found to be proportional to the de transconductance gm of the device, consistent with the relation h = gJßπC¢). The peak h increases with a reduced gate length, and h as high as 26 GHz is measured for a graphene transί stor with a gate iength of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
John G. Long, Peter C. Searson, et al.
JES
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010