Optical analysis of wet chemically etched InGaAs/InP wires

B. Jacobs; M. Emmerling; A. Forchel; I. Gyuro; P. Speier; E. Zielinski; P. Röntgen

doi:10.1016/0167-9317(92)90102-W

Microelectronic Engineering

Paper

01 Jan 1992

Optical analysis of wet chemically etched InGaAs/InP wires

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Abstract

We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.

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