C. Sandow, J. Knoch, et al.
DRC 2008
We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems. © 2008 IEEE.
C. Sandow, J. Knoch, et al.
DRC 2008
Y.-M. Lin, J. Appenzeller, et al.
DRC 2005
J. Appenzeller, M. Radosavljević, et al.
Physical Review Letters
C. Sandow, J. Knoch, et al.
Solid-State Electronics