Min Dai, Yanfeng Wang, et al.
Journal of Applied Physics
We provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in metal-ultrathin oxide-semiconductor heterostructures, calculating its effect upon the band bending and interfacial oxidation rates and showing good experimental agreement with the predictions. © 2007 The American Physical Society.
Min Dai, Yanfeng Wang, et al.
Journal of Applied Physics
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ECS Meeting 2011
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IEEE Electron Device Letters
P. Hirani, S. Balivada, et al.
SENSORS 2018