Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Thermal fluctuations of phase boundaries seperating two regions of Si surfaces near the phase transition temperature of 1135 K were analyzed by low-energy electron microscopy. The surface stress difference between the phases was found to affect the surface morphology and was estimated to be 0.06ev/(angstrom)2. The effect of elastic self-interactions at the phase boundary was integrated at the local phase boundary stiffness.
T.N. Morgan
Semiconductor Science and Technology
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APS Global Physics Summit 2025
Imran Nasim, Melanie Weber
SCML 2024