Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
We report the results of low-temperature photoluminescence measurements on a series of heavily-doped Si: As and Si: B samples. New spectra are obtained for very high doping levels (1019 2- 1020 cm-3), and the results for the more lightly doped samples are found to be in good agreement with previously published data. By comparing the luminescence of a Si: As sample before and after partial compensation with B, we verify that minority carriers can be localized even in "metallic" samples. © 1981.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures