J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
We report the results of low-temperature photoluminescence measurements on a series of heavily-doped Si: As and Si: B samples. New spectra are obtained for very high doping levels (1019 2- 1020 cm-3), and the results for the more lightly doped samples are found to be in good agreement with previously published data. By comparing the luminescence of a Si: As sample before and after partial compensation with B, we verify that minority carriers can be localized even in "metallic" samples. © 1981.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Ming L. Yu
Physical Review B
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020