PaperIn situ doping of catalyst-free InAs nanowiresHesham Ghoneim, Philipp Mensch, et al.Nanotechnology
PaperDoping limits of grown in situ doped silicon nanowires using phosphineHeinz Schmid, Mikael T. Björk, et al.Nano Letters
Conference paperElectrical and thermoelectrical properties of gated InAs nanowiresPhilipp Mensch, Siegfried Karg, et al.ESSDERC 2013