Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
X-ray absorption spectroscopy was applied to study the pressure-induced valence changes in EuS and SmTe, which are divalent semiconductors of NaCl-type structure at ambient pressure. In both systems the eu-ljjj and Sm-Ljjj thresholds exhibit the onset of intermediate valencies of the rare earth ions at 15 GPa and 4 GPa, respectively. In EuS, one observes only a small increase of the valency within the investigated pressure range (36 GPa), while in SmTe a full transition to trivalency is observed above 20 GPa. The transition to the CsCl-Type high-pressure phase has no significant influence on the valence in both systems. © 1990, Taylor & Francis Group, LLC. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
J.C. Marinace
JES
P. Alnot, D.J. Auerbach, et al.
Surface Science