Probing depth of threshold photoemission electron microscopy

G.K.L. Marx; P.O. Jubert; A. Bischof; R. Allenspach

doi:10.1063/1.1616651

Applied Physics Letters

Paper

30 Sep 2003

Probing depth of threshold photoemission electron microscopy

View publication

Abstract

Probing depth of threshold photoemission electron microscopy was discussed. Photon excitation energies of 5 eV were studied. The mechanism responsible for bulk sensitivity was also studied. It was found that the probing depth is of 16.2 nm.

Paper

Growing thin magnetic films with a mask: Distinguishing between magnetic and instrumental asymmetries

R. Allenspach, A. Bischof, et al.

Applied Physics Letters

Paper

Spin-polarized secondary electrons from a scanning tunneling microscope in field emission mode

R. Allenspach, A. Bischof

Applied Physics Letters

Paper

Magnetic domains in thin epitaxial Co/Au(111) films

R. Allenspach, M. Stampanoni, et al.

Physical Review Letters

Conference paper

Critical parameters and temperature dependence for current-induced wall motion

W. Buehrer, U. Ruediger, et al.

INTERMAG 2006

View all publications

Abstract

Related

Growing thin magnetic films with a mask: Distinguishing between magnetic and instrumental asymmetries

Spin-polarized secondary electrons from a scanning tunneling microscope in field emission mode

Magnetic domains in thin epitaxial Co/Au(111) films

Critical parameters and temperature dependence for current-induced wall motion