The DX centre
T.N. Morgan
Semiconductor Science and Technology
With the help of a multiconfigurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a self-consistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections. Such deviations are crucial for the interpretation of experimentally determined capacitances and the extraction of application-relevant system parameters. © 2006 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
David B. Mitzi
Journal of Materials Chemistry
A. Krol, C.J. Sher, et al.
Surface Science