S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A quantitative study of the influence of a magnetic field on a beam of ballistic electrons in a hot-electron transistor has been undertaken. A field parallel to the direction of electron injection had virtually no effect. A perpendicular field caused the electrons to be collected at lower energies. A B2 dependence of peak collection energy on magnetic field was observed, as one would predict from a semiclassical description, but with an effective mass 2-3 times larger than one would expect. Possible implications are discussed. © 1989 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009