G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Paper
Raman Spectroscopy and the Characterization of Buried Semiconductor Layers
Abstract
The ability of Raman scattering to characterize a subnanometer buried layer of Ge in Si (100) with respect to composition, strain, homogeneity, structure, and thickness is described. The inability of Raman scattering to provide quantitative information on the thickness of a buried thin layer is discussed. © 1989 IEEE
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