G.S. Oehrlein, R.M. Tromp, et al.
JES
Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1-y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y<2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm-1.
G.S. Oehrlein, R.M. Tromp, et al.
JES
J.C. Tsang, M.A. Tischler, et al.
Applied Physics Letters
Stefan Zollner, R.T. Collins, et al.
SPIE Semiconductors 1992
K. Eberl, Subramanian S. Iyer, et al.
Applied Physics Letters