J.C. Tsang, M.A. Tischler, et al.
Applied Physics Letters
Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1-y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y<2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm-1.
J.C. Tsang, M.A. Tischler, et al.
Applied Physics Letters
F.K. LeGoues, J.A. Ott, et al.
Applied Physics Letters
J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
Subramanian S. Iyer, K. Eberl, et al.
Applied Physics Letters