Ronald Troutman
Synthetic Metals
Bismuth, a semi-metal with very long mean free path and large magnetoresistance (MR) effect, is a novel candidate material for thin film spintronic devices. Electrochemical deposition followed by a post-deposition anneal has resulted in highly textured bismuth films as characterized by x-ray diffractometry and pole figure measurements. A highly sensitive, real time in-situ stress measurement system was designed and employed to study stress generation during bismuth film growth. Bismuth films displayed a monotonically increasing compressive stress during deposition. The magnitude of the compressive stress decreased with the deposition rate in the range 1.5 Å/see to 50 Å/see. © 2003 Materials Research Society.
Ronald Troutman
Synthetic Metals
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990