Frank Stem
C R C Critical Reviews in Solid State Sciences
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
Frank Stem
C R C Critical Reviews in Solid State Sciences
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Digital Discovery
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Physical Review B
P.C. Pattnaik, D.M. Newns
Physical Review B