A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
We have investigated the behaviour under accelerated reliability tests of MOS capacitors stressed at high voltage in accumulation with ultra-thin SiO 2 dielectrics and with tungsten gates. Standard p+ poly-Si gates are used as reference. In this report, we show and discuss data concerning the oxide wearout and the breakdown transient. © 2004 Elsevier B.V. All rights reserved.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures