J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Hyper-thin films (∼1nm or thinner) of SiO2 or silicon oxynitride continue to be a critical component as the gate insulator in high-performance MOSFETs or as the interfacial layer in high-κ stacks for low power applications. Controversy remains over the physical interpretation as well as the application of breakdown data, but there is general agreement that the reliability margin for hyper-thin oxide is greatly diminished compared to thicker films, if the time of first breakdown is assumed to correspond to product failure. However, the last few years have seen some new understanding of the breakdown process, and renewed attention to the actual effect of oxide breakdown on circuit performance, which may permit an improved reliability outlook. In this paper we review oxide reliability projections and discuss current topics such as progressive breakdown and implications for circuits. © 2003 Elsevier Ltd. All rights reserved.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J. Tersoff
Applied Surface Science