Reply to &quot;Comment on Abraham’s isothermal-isobaric molecular-dynamics calculations&quot;

Farid F. Abraham; S.W. Koch

doi:10.1103/PhysRevB.29.2824

Physical Review B

Paper

01 Mar 1984

Reply to "Comment on Abraham's isothermal-isobaric molecular-dynamics calculations"

View publication

Abstract

A reply is made to Toxvaerd's Comment on Abraham's constant-pressure molecular-dynamics method. We show that our procedure is correct and that Toxvaerd's Comment is without merit. © 1984 The American Physical Society.

Conference paper

Investigations of silicon nano-crystal floating gate memories

Arvind Kumar, Jeffrey J. Welser, et al.

MRS Spring 2000

Paper

Silylation of resist materials using di- and polyfunctional organosilicon compounds

E. Babich, J. Paraszczak, et al.

Microelectronic Engineering

Paper

Ground state of liquid⁴He

R.D. Murphy, R.O. Watts

Journal of Low Temperature Physics

Paper

Vortex dynamics in YBaCuO single crystals with point- and line-like defects-flux creep studies

J.R. Thompson, Yang Ren Sun, et al.

Physica A: Statistical Mechanics and its Applications

View all publications

Abstract

Related

Investigations of silicon nano-crystal floating gate memories

Silylation of resist materials using di- and polyfunctional organosilicon compounds

Ground state of liquid4He

Vortex dynamics in YBaCuO single crystals with point- and line-like defects-flux creep studies

Ground state of liquid⁴He