Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The resistance as a function of tip-sample separation in the scanning tunneling microscope is calculated for distances in the transition region between tunneling and point contact. A resistance plateau appears near point contact with value A <>e2, where A is of order unity, its exact value depending on the identity of the tip atom. Good agreement is found with the recent experimental data of Gimzewski and Möller. © 1987 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
P. Alnot, D.J. Auerbach, et al.
Surface Science
Revanth Kodoru, Atanu Saha, et al.
arXiv
P.C. Pattnaik, D.M. Newns
Physical Review B