Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Paper
Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures
Abstract
We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined. © 1986 The American Physical Society.
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