Hongsik Park, Ali Afzali, et al.
Nature Nanotechnology
The temperature dependence of ring-oscillator delay of high-k/metal- gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature. © 2009 IEEE.
Hongsik Park, Ali Afzali, et al.
Nature Nanotechnology
Miaomiao Wang, Jingyun Zhang, et al.
IRPS 2019
Aaron D. Franklin, Mathieu Luisier, et al.
Nano Letters
Davood Shahrjerdi, Aaron D. Franklin, et al.
IEDM 2011