K.Y. Lee, K. Ismail, et al.
Microelectronic Engineering
We report on room-temperature electron transport measurements in modulation-doped strained Si/SiGe heterostructures, grown by ultrahigh-vacuum chemical vapor deposition. A high room-temperature mobility is expected in such samples because of the strain-induced splitting of the conduction band in the silicon channel. Record values of over 2600 cm2/V s have been measured, almost twice the theoretical maximum for relaxed silicon.
K.Y. Lee, K. Ismail, et al.
Microelectronic Engineering
K. Ismail, J.O. Chu, et al.
Applied Physics Letters
Q. Ouyang, S.J. Koester, et al.
SISPAD 2003
J. Wróbel, F. Kuchar, et al.
Surface Science