Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
The Schottky barrier heights of scandium deposited on n- and p-type silicon have been measured by the capacitance versus voltage technique. Respective values of about 0.4 and 0.7 eV were determined; they do not change upon the formation of the monosilicide, ScSi, after annealing at 500°C. These results are similar to those obtained with yttrium and the rare-earth metals, in agreement with the respective positions of these elements in the Periodic Table: same column, but fourth, fifth and sixth periods, respectively. © 1991.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Hiroshi Ito, Reinhold Schwalm
JES