B.Z. Weiss, K.N. Tu, et al.
Metallurgical Transactions A
We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.
B.Z. Weiss, K.N. Tu, et al.
Metallurgical Transactions A
E.I. Alessandrini, D.R. Campbell, et al.
Journal of Applied Physics
J.O. Olowolafe, K.N. Tu, et al.
Journal of Applied Physics
J.M. Liang, L.J. Chen, et al.
Materials Chemistry and Physics